使用言語 |
: | English |
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掲載資料名 |
: | |
巻 |
: | 41 |
号 |
: | 2A |
ページ数 |
: | p.800 - 804 |
発行年月 |
: | 2002/02 |
キーワード |
: | Reflactive Indices; Oxide Layers; SiC; Sectroscopic Ellipsometry; SiO; Depth Profile; Interface Layer; Interface; MOS |
論文URL |
: |
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論文解説記事 |
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受委託・共同研究相手機関 |
: |
Access |
: |
- Accesses |
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InCites™ |
: |
パーセンタイル:52.26 分野:Physics, Applied |
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