In situ EELS and TEM observation of silicon carbide irradiated with helium ions at low temperature and successively annealed

Hojo, Kiichi; Furuno, Shigemi; Kushita, Kohei; not registered; not registered; not registered

no abstracts in English

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	116
Number	:
Pages	:	p.382 - 388
Publication Year/Month	:	1996/00
Meeting title	:	8th Int. Conf. on Radiation Effects Insulators; REI-8
Held date	:	1995/09
Location (city)	:	Italy
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/0168-583X(96)00075-4
DOI for research data	:
Keywords	:	SiC; 高分解能EELS; イオン照射; 室温; 高温; 構造変化
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:91 Category:Instruments & Instrumentation
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Registration No. : B19950093
JAEA Abstracts No. : 240867
Paper Submission No. : 14279

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