Magnetic and electrical properties in CePtSi $_{3}$ without inversion symmetry in the crystal structure

Kawai, Tomoya*; Okuda, Yusuke*; Shishido, Hiroaki*; Thamizhavel, A.*; Matsuda, Tatsuma; Haga, Yoshinori ; Nakashima, Miho*; Takeuchi, Tetsuya*; Hedo, Masato*; Uwatoko, Yoshiya*; Settai, Rikio*; Onuki, Yoshichika*

We succeeded in growing a single crystal of CePtSi $_{3}$ by the Sn-flux method. CePtSi $_{3}$ is found to be an antiferromagnet with two transitions at 4.8 and 2.4 K. Magnetic easy direction was [100] direction with an ordered moment of 1.15 $mu_{rm B}$ /Ce. The anisotropy is similar to that of CeIrSi $_{3}$ in which the pressure-induced superconductivity was observed.

Language	:	English
Journal	:	Journal of the Physical Society of Japan
Volume	:	76
Number	:	1
Pages	:	p.014710_1 - 014710_6
Publication Year/Month	:	2007/01
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Paper URL	:	https://doi.org/10.1143/JPSJ.76.014710
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	第4研究棟
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Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学

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Registration No. : AA20060796
JAEA Abstracts No. : 35000333
Paper Submission No. : 1882

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Magnetic and electrical properties in CePtSi without inversion symmetry in the crystal structure

Magnetic and electrical properties in CePtSi $_{3}$ without inversion symmetry in the crystal structure