Si/SiGe]
(n = 1-2) multi-layered structures for spintronics applicationSado, Taizo*; Ueda, Koji*; Ando, Yuichiro*; Kumano, Mamoru*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*
Our recent progresses in epitaxial growth of FeSi on Ge substrates are reviewed. Single crystalline FeSi layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60
200 
C). Thermal stability of it was guaranteed up to 400 C. In addition, epitaxial growth of mixed layers composed of FeSi, FeGe, and FeSi on Ge substrates at 400 C is reported. Finally, epitaxial growth of FeSi/Ge/FeSi/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 11 |
Number |
: | 6 |
Pages |
: | p.473 - 479 |
Publication Year/Month |
: | 2007/00 |
Meeting title |
: | |
Held date |
: | 2007/10 |
Location (city) |
: | Washington, D.C. |
Location (country) |
: | U.S.A. |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
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Cooperating Institute |
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Accesses |
: |
- Accesses |
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