Enhancement of local electrical conductivities in SiC by femtosecond laser modification

フェムト秒レーザー改質によるSiCの局所電気伝導度特性の増加

出来 真斗; 伊藤 拓人*; 山本 稔*; 富田 卓朗*; 松尾 繁樹*; 橋本 修一*; 北田 貴弘*; 井須 俊郎*; 小野田 忍; 大島 武

Deki, Manato; Ito, Takuto*; Yamamoto, Minoru*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Enhancement of local electric conductivity in Silicon Carbide (SiC) induced by irradiation of femtosecond laser was studied. Current-voltage characteristics of the laser-modified regions were measured. As a result, it was found that the conductivity increases with increase in the fluence, and the conductivity sharply increases in the fluence range from 5.0 to 6.7 J/cm. The conductivity of modified region at the irradiation fluence of 53 J/cm is six orders of magnitude higher than the non irradiated one. From the current-voltage characteristics and the scanning electron microscope observations, we conclude that the drastic change in electrical conductivity is assumed to be associated with the phase transition induced by femtosecond laser.