Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Hamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi

Authors have shown that thin, uniform and highly-oriented -FeSi films can be fabricated on Si(100) substrates when they are sputter-cleaned with low-energy ions. In the present study, dependence of the crystalline properties of -FeSi films on the irradiated fluence of sputter etching (SE) was investigated to discuss whether it is possible to obtain high crystalline -FeSi thin film with very low defect concentration. The -FeSi thin film was fabricated on Si(100) substrate which was irradiated with 3 keV Ne to an ion fluence of 3.710 m, which is 1/10 of the fluence typically employed by the authors. The results revealed that the film deposited at 973 K was essentially polycrystalline, whereas the films deposited at 923 K was highly-oriented to (100) surfaces. This fact indicates that fabrication of high crystalline -FeSi film is also possible under low fluence SE conditions.