Investigation of unoccupied electronic states near the fermi level of polysilane using resonant Auger spectroscopy

Ogawa, Hiroshi*; Ikeura, Hiromi*; Sekiguchi, Tetsuhiro  

Unoccupied electronic states near the Fermi level of poly(dimethylsilane) were probed using Si 1s X-ray absorption spectroscopy (XAS) and Si KLL resonant Auger spectroscopy (RAS). The measured resonance peaks of XAS spectra near Si K-edge have been assigned in comparison with the discrete variational (DV)-X molecular orbital calculations. The rapid delocalization of Si 1s core-excited electron through the empty conduction band was observed along the polymer chain with the energy dependent RAS measurement, and the electron delocalization time was estimated based on the core-hole clock method.