New p- and n-type ferromagnetic semiconductors; Cr-doped BaZn $_{2}$ As $_{2}$

新しいp型とn型の強磁性半導体; CrドープBaZn $_{2}$ As $_{2}$

We find new ferromagnetic semiconductors, Cr-doped BaZn $_{2}$ As $_{2}$ , by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn $_{2}$ As $_{2}$ and the different hybridization of 3d orbitals of Cr impurity, the impurity bound states have been induced both below the top of valence band and above the bottom of conduction band. The long-range ferromagnetic coupling between Cr impurities is obtained with both p- and n-type carriers.

使用言語	:	English
掲載資料名	:	AIP Advances (Internet)
巻	:	7
号	:	5
ページ数	:	p.055805_1 - 055805_6
発行年月	:	2017/05
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論文URL	:	https://doi.org/10.1063/1.4973208
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Web of Science® Times Cited Count	:	被引用回数：評価・統計等のため最新の被引用回数を確認したい場合は、直接Web of Science®をご確認ください。 http://www.webofknowledge.com/wos
InCites™	:	パーセンタイル：20.18 分野：Nanoscience & Nanotechnology
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登録番号 : AA20170061
抄録集掲載番号 : 45000572
論文投稿番号 : 18839

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New p- and n-type ferromagnetic semiconductors; Cr-doped BaZnAs

新しいp型とn型の強磁性半導体; CrドープBaZnAs

New p- and n-type ferromagnetic semiconductors; Cr-doped BaZn $_{2}$ As $_{2}$

新しいp型とn型の強磁性半導体; CrドープBaZn $_{2}$ As $_{2}$