SiO $_{2}$ /AlON stacked gate dielectrics for AlGaN/GaN MOS-HFET

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka ; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

The advantage of SiO $_{2}$ /AlON stacked gate dielectrics over SiO $_{2}$ , AlON and Al $_{2}$ O $_{3}$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Language	:	English
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Meeting title	:	2017 International Workshop on Dielectric Thin Films for Future Electron Devices; Science and Technology (IWDTF 2017)
Held date	:	2017/11
Location (city)	:	Nara
Location (country)	:	Japan
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Keywords	:	放射光光電子分光; 界面制御; 機能デバイス評価
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20171064
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SiO/AlON stacked gate dielectrics for AlGaN/GaN MOS-HFET

SiO $_{2}$ /AlON stacked gate dielectrics for AlGaN/GaN MOS-HFET