Spin Hall magnetoresistance in quasi-two-dimensional antiferromagnetic-insulator/metal bilayer systems

準二次元反強磁性絶縁体/金属二重層系におけるスピンホール磁気抵抗

石川 卓門*; 松尾 衛; 加藤 岳生*

Ishikawa, Takuto*; Matsuo, Mamoru; Kato, Takeo*

We study the temperature dependence of spin-Hall magnetoresistance (SMR) in antiferromagnetic-insulator/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the SMR depends on the amplitude of the spin, thickness of the antiferromagnetic-insulator layer, and randomness of the exchange interactions. Our results for simple quantum spin models provide a useful starting point for understanding SMR measurements on atomic layers of magnetic compounds.