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Meer, H.*; Wust, S.*; Schmitt, C.*; Herrgen, P.*; Fuhrmann, F.*; Hirtle, S.*; Bednarz, B.*; Rajan, A.*; Ramos, R.*; Ni
o, M. A.*; et al.
Advanced Functional Materials, 33(21), p.2213536_1 - 2213536_6, 2023/05
被引用回数：1 パーセンタイル：49.29(Chemistry, Multidisciplinary)The antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. After the irradiation with laser light, the optically induced creation of antiferromagnetic domains can be observed by imaging the created domain structure utilizing the X-ray magnetic linear dichroism effect. The effect of different laser polarizations on the domain formation can be studied and used to identify a polarization-independent creation of 180
domain walls and domains with 180 different N
el vector orientation. By varying the irradiation parameters, the switching mechanism can be determined to be thermally induced. This study demonstrates experimentally the possibility to optically create antiferromagnetic domains, an important step towards future functionalization of all optical switching mechanisms in antiferromagnets.
Schreiber, F.*; Meer, H.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Baldrati, L.*; Kl
ui, M.*
Physical Review Applied (Internet), 16(6), p.064023_1 - 064023_9, 2021/12
被引用回数：3 パーセンタイル：26.56(Physics, Applied)We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
Meer, H.*; Schreiber, F.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Gomonay, O.*; Sinova, J.*; Baldrati, L.*; Klui, M.*
Nano Letters, 21(1), p.114 - 119, 2021/01
被引用回数：54 パーセンタイル：96.96(Chemistry, Multidisciplinary)We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
