Spin dependence in the -wave resonance of +

Okudaira, Takuya*; Nakabe, Rintaro*; Auton, C. J.*; Endo, Shunsuke; Fujioka, Hiroyuki*; Gudkov, V.*; Ide, Ikuo*; Ino, Takashi*; Ishikado, Motoyuki*; Kambara, Wataru*; et al.

Physical Review C, 109(4), p.044606_1 - 044606_9, 2024/04

https://doi.org/10.1103/PhysRevC.109.044606

Rotation of complex ions with ninefold hydrogen coordination studied by quasielastic neutron scattering and first-principles molecular dynamics calculations

Omasa, Yoshinori*; Takagi, Shigeyuki*; Toshima, Kento*; Yokoyama, Kaito*; Endo, Wataru*; Orimo, Shinichi*; Saito, Hiroyuki*; Yamada, Takeshi*; Kawakita, Yukinobu; Ikeda, Kazutaka*; et al.

Physical Review Research (Internet), 4(3), p.033215_1 - 033215_9, 2022/09

https://doi.org/10.1103/PhysRevResearch.4.033215

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a BC thin film

Norimatsu, Wataru*; Matsuda, Keita*; Terasawa, Tomoo; Takata, Nao*; Masumori, Atsushi*; Ito, Keita*; Oda, Koji*; Ito, Takahiro*; Endo, Akira*; Funahashi, Ryoji*; et al.

Nanotechnology, 31(14), p.145711_1 - 145711_7, 2020/04

https://doi.org/10.1088/1361-6528/ab62cf

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of BC on SiC and graphene on BC had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on BC acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on BC was highly boron doped, and the hole concentration could be controlled over a wide range of 210 to 210 cm. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.