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Journal Articles

Direct ${it in-situ}$ temperature measurement for lamp-based heating device

Sumita, Takehiro; Sudo, Ayako; Takano, Masahide; Ikeda, Atsushi

Science and Technology of Advanced Materials; Methods (Internet), 2(1), p.50 - 54, 2022/02

https://doi.org/10.1080/27660400.2022.2035097

Journal Articles

High reactivity of H$$_{2}$$O vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180
 Times Cited Count：4 Percentile：46.76(Materials Science, Multidisciplinary)

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that H$$_{2}$$O vapor has the highest reactivity due to the spin interaction between H$$_{2}$$O and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and Al$$_{x}$$Ga$$_{1-x}$$N formation for p-GaN were observed at the interface of the Al$$_{2}$$O$$_{3}$$ layer deposited by ALD using H$$_{2}$$O vapor. This study suggests that an oxidant gas other than H$$_{2}$$O and O$$_{2}$$ should be used to avoid unintentional oxidation during Al$$_{x}$$Ga$$_{1-x}$$N atomi layer deposition.

Journal Articles

Work hardening behavior of hot-rolled metastable Fe$$_{50}$$Co$$_{25}$$Ni$$_{10}$$Al$$_{5}$$Ti$$_{5}$$Mo$$_{5}$$ medium-entropy alloy; In situ neutron diffraction analysis

Kwon, H.*; Harjo, S.; Kawasaki, Takuro; Gong, W.; Jeong, S. G.*; Kim, E. S.*; Sathiyamoorthi, P.*; Kato, Hidemi*; Kim, H. S.*

Science and Technology of Advanced Materials, 23(1), p.579 - 586, 2022/00

https://doi.org/10.1080/14686996.2022.2122868
 Times Cited Count：6 Percentile：61.59(Materials Science, Multidisciplinary)

Journal Articles

Investigation of microstructure in additive manufactured Inconel 625 by spatially resolved neutron transmission spectroscopy

Tremsin, A. S.*; Gao, Y.*; Dial, L. C.*; Grazzi, F.*; Shinohara, Takenao

Science and Technology of Advanced Materials, 17(1), p.324 - 336, 2016/07

AA2016-0560.pdf:3.26MB

https://doi.org/10.1080/14686996.2016.1190261
 Times Cited Count：20 Percentile：55.61(Materials Science, Multidisciplinary)

Journal Articles

Possible weak magnetism in MB$$_6$$ (M: Ca, Ba) probed by muon spin relaxation and muon level-crossing resonance

Kuroiwa, Sogo*; Takagiwa, Hiroyuki*; Yamazawa, Maki*; Akimitsu, Jun*; Koda, Akihiro*; Kadono, Ryosuke*; Oishi, Kazuki; Higemoto, Wataru; Watanabe, Isao*

Science and Technology of Advanced Materials, 7(1), p.12 - 16, 2006/01

https://doi.org/10.1016/j.stam.2005.11.012
 Times Cited Count：5 Percentile：22.26(Materials Science, Multidisciplinary)

The temperature dependence of muon spin relaxation rate exhibits a significant increase below $$sim$$130 K in CaB$$_6$$ and $$sim$$110 K in BaB$$_6$$, while no sigh of spontaneous muon precession signal under a zero field is observed. Moreover, the electric field gradient at the boron site measured by muon level-crossing resonance exhibits a step like change at $$sim$$110 K in CaB$$_6$$. These results suggest a change in electronic state and the associated emergence of weak random magnetism below 110-130 K in these alkaline earth hexaborides.

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