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and GeO liquidsKawaguchi, Munemichi; Uno, Masayoshi*
Journal of Crystal Growth, 585, p.126590_1 - 126590_7, 2022/05
Phase-field mobility, 
, and crystal growth rates in crystallization of 11 oxides or mixed oxides in undercooled silicates, SiO and GeO liquids were calculated with a simple phase-field model (PFM), and material dependence of the was discussed. Ratios between experimental crystal growth rates and the PFM simulation with 
were confirmed to be proportional to a power of 
on the solid/liquid interface process during the crystal growth in a log-log plot. We determined that parameters, 
and 
, of the 
were 
to 
m
J
s and 
to 
, which were unique for the materials. It was confirmed that our PFM simulation with the determined reproduced quantitively the experimental crystal growth rates. The has a proportional relationship with the diffusion coefficient of a cation molar mass average per unit an oxygen molar mass at 
in a log-log graph. The depends on the sum of the cation molar mass per the oxygen molar mass, 
, in a compound. In 
, the decreases with the cation molar mass increasing. The assumed cause is that the B represents the degree of the temperature dependence of the . Since the cation molar mass is proportional to an inertial resistance of the cation transfer, the decreases with inverse of the cation molar mass. In crystallization of the silicates of heavy cation in 
, the saturates at approximately 0.67, which leads to 
.
Yokota, Sho*; Chugo, Daisuke*; Hashimoto, Hiroshi*; Kawabata, Kuniaki
Proceedings of 25th IEEE International Symposium on Robot and Human Interactive Communication, p.910 - 911, 2016/08
The purpose of this paper is to experimentally investigate specific ranges of play (software backlash, deadzone) on the saddle type interface for the personal mobility (PM), and to implement them into the control scheme.
lrradiated p-channel 6H-SiC MOSFETs; High total doseLee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 50(1), p.194 - 200, 2003/02
Times Cited Count：27 Percentile：84.34(Engineering, Electrical & Electronic)p-channel SiC MOSFETs were fabricated on n-type 6H-SiC epitaxial layer. The effects of -ray irradiation on the charecteristics of the MOSFETs were studied. Threshold voltage shifts to negative voltage side and the channel mobility reduces due to irradiation. Although the degradation of the channel mobility of the p-channel SiC MOSFETs is 10 times faster than n-channel SiC MOSFETs, p-channel SiC MOSFETs show 100 times stronger radiation resistance than Si MOSFETs. The values of interface traps and oxide-trapped-charge generated sue to irradiation were estimated from the subthreshold characteristics. As the result,it is concluded that the decrease in channel mobility can be explained by the generation of interface traps.
