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JAEA Reports

TIARA annual report 2004

Advanced Radiation Technology Department

JAEA-Review 2005-001, 412 Pages, 2006/01

JAEA-Review-2005-001-p0001-p0126.pdf:11.34MB
JAEA-Review-2005-001-p0127-p0267.pdf:15.12MB
JAEA-Review-2005-001-p0268-p0412.pdf:11.05MB

This annual report describes research and development activities which have been performed with the JAERI TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 2004 to March 31, 2005. Summary reports of 121 papers and brief descriptions on the status of TIARA in the period are contained. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices. On 1st October 2005, Japan Atomic Energy Research Institute combined with Japan Nuclear Cycle Development Institute and established a new organization, Japan Atomic Energy Agency (JAEA). This report describes the research and development activities which have been performed with JAERI (Japan Atomic Energy Research Institute).

JAEA Reports

Annual report of Kansai Research Establishment 2004; April 1, 2004 - March 31, 2005

Kansai Photon Science Institute

JAEA-Review 2005-002, 152 Pages, 2006/01

JAEA-Review-2005-002.pdf:15.42MB

This report is the sixth issue of the annual report of Kansai Research Establishment, Japan Atomic Energy Research Institute. It covers status report of R&D and results of experiments conducted at the Advanced Photon Research Center and Synchrotron Radiation Research Center during the period from April 1, 2004 to March 31, 2005. The JAERI(Japan Atomic Energy Research Institute) have been unified with JNC(Japan Nuclear Fuel Cycle Development Institute) and became JAEA(Japan Atomic Energy Agency) on October 1st, 2005.

JAEA Reports

Participation report for International Conference; 2nd Japan-Korea Joint Workshop on Radioactive Waste Disposal 2005, Interaction between NBS and EBS

Sato, Haruo

JAEA-Review 2005-003, 18 Pages, 2006/02

JAEA-Review-2005-003.pdf:4.9MB

The 2nd Japan-Korea Joint Workshop on Radioactive Waste Disposal 2005: Interaction between NBS and EBS was held at Tpkyo Institute of Technology from Octover 6th to 7th, 2005. Approximately, 30 scientists participated from both countries. Totally 17 presentations which consist of 4 presentations from Korea and 13 presentations from Japan were made. Proceedings were distributed on the day. This report describes technical topics obtained participating in the workshop.

JAEA Reports

JAERI Tandem annual report 2004; April 1, 2004-March 31, 2005

Department of Research Reactor and Tandem Accelerator

JAEA-Review 2005-004, 147 Pages, 2006/01

JAEA-Review-2005-004.pdf:9.89MB

This annual report describes research activities, which have been performed with the JAERI tandem accelerator and its energy booster from April 1, 2004 to March 31, 2005. Summary reports of 48 papers, and lists of publication, personnel and cooperative research with universities are contained.

JAEA Reports

Review of JT-60U experimental results in 2003 and 2004

JT-60 Team

JAEA-Review 2005-005, 196 Pages, 2006/01

JAEA-Review-2005-005.pdf:16.19MB

no abstracts in English

JAEA Reports

Expansion of Neutron-Transmutation-Doped Silicon (NTD-Si) semiconductor productivity using research reactors (JRR-3, JRR-4 and JMTR)

Working Group for NTD Technology

JAEA-Review 2005-006, 56 Pages, 2006/01

JAEA-Review-2005-006.pdf:5.75MB

Neutron-transmutation-doped silicon (NTD-Si) is regarded as a promising semiconductor for power device application. The demand of NTD-Si is expected to be raised significantly due to mass production of hybrid-cars in the near future. In order to meet the demand, we have investigated the expansion technology of the NTD-Si productivity in the research reactors of JRR-3, JRR-4 and JMTR. We have made out the following proposals. (1) In the JRR-3, the external cooling method should be preferentially developed to be twice the productivity of NTD-Si using a modified Si-irradiation facility, at the first step. At the next step, a full-automatic Si-irradiation facility should be installed to increase the NTD-Si productivity four-times. (2) In the JRR-4, the Si-irradiation facility, by which an Si ingot of 8- and 12-inch in diameter can be irradiated with neutrons, should be designed and installed around the reactor core tank. (3) In the JMTR, the Si-irradiation facilities for 8-inch and 6-inch diameter ingots should be developed for producing NTD-Si of approximately 30 ton/year. By realizing the modifications mentioned-above, the productivity of NTD-Si will increase to approximately 46 ton/year, that is about 10 times as great as the present one, and thus about a half of the present domestic demand of NTD-Si will be covered by processing utilization of the research reactors.Silicon carbide (SiC) semiconductors doped with the NTD technology are considered suitable for high power devices with superior performances to conventional Si-based devices. It is strongly recommended that R&D of SiC-NTD technology is performed in collaboration with industries and research institutes.

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