Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1MeV electron irradiation

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Yoshikawa, Masahito; Kojima, Kazutoshi; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Physica Status Solidi (B)
Volume	:	223
Number	:	2
Pages	:	p.R8 - R10
Publication Year/Month	:	2001/01
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Paper URL	:	https://doi.org/10.1002/1521-3951(200101)223:23.0.CO;2-N
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Keywords	:	炭化ケイ素(SiC); 欠陥; 陽電子消滅; Sパラメータ; Wパラメータ
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Registration No. : A20000441
JAEA Abstracts No. : 290417
Paper Submission No. : 18054

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