Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

no abstracts in English

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	308-310
Number	:
Pages	:	p.633 - 636
Publication Year/Month	:	2001/12
Meeting title	:	21st International Conference on Defects in Semiconductors (ICDS-21)
Held date	:	2001/07
Location (city)	:	Giessen
Location (country)	:	Germany
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0921-4526(01)00772-4
DOI for research data	:
Keywords	:	SiC; 電子線照射; ヘリウムイオン; 4H SiC; 電子準位; 陽電子消滅; DLTS; Z1/Z2
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:78.2 Category:Physics, Condensed Matter
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Registration No. : B20002071
JAEA Abstracts No. : 300545
Paper Submission No. : 19076

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