thin filmsTanaka, Toru*; Yamaguchi, Toshiyuki*; Oshima, Takeshi; Ito, Hisayoshi; Wakahara, Akihiro*; Yoshida, Akira*
Single crystalline CuInSe thin films grown on GaAs were implanted with Cl ions at room temperature. The mean concentration of Cl ranges from 5E17 to 5E19 /cm
. Residual defects introduced in implantated layer are removed by annealing at 400
C in N. As a result of Hall effects measuremant, electron concentration in implanted layer increases with increasing implanted Cl concentration. This result suggests that Cl acts as donor in CuLnSe. Ionizing energy of Cl is estimated to be 78 meV from the temperature dependence of electron concentation.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 75 |
Number |
: | 1-2 |
Pages |
: | p.109 - 113 |
Publication Year/Month |
: | 2003/01 |
Meeting title |
: | 12th International Photovoltaic Science and Engineering Conference (PVSEC-12) |
Held date |
: | 2001/06 |
Location (city) |
: | Cheju Island |
Location (country) |
: | Korea |
Paper URL |
: |
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Keywords |
: | |
Research Facility |
: | |
Cooperating Institute |
: |
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Percentile:54.61 Category:Energy & Fuels |
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