Characterization of epitaxial TiO films prepared by pulsed laser deposition

Yamamoto, Shunya; Sumita, Taishi; Yamaki, Tetsuya; Miyashita, Atsumi; Naramoto, Hiroshi

The epitaxial growth of TiO films has attracted much interest from the viewpoints of basic science and applications. In the present study, it is shown that TiO films with anatase or rutile structure can be grown by pulsed laser deposition(PLD) with an ArF excimer laser under the controlled O atmosphere. The TiO films were prepared on the LaAlO, LSAT SrTiO and -AlO single crystal substrates. The epitaxial films were analyzed by RBS and X-ray diffraction for investigating the crystallographic relationships with the substrates. The high quality anatase TiO(001) films have been successfully grown on the LaAlO (001), LSAT (001) and SrTiO (001) substrates at temperatures above 500C. Also the high quality rutile TiO(100) and (001) films were obtained on the -AlO (0001) and (10-10), respectively.The optical properties were characterized by optical absorption measurements. The optical band gaps for anatase and rutile TiO epitaxial films were evaluated to be 3.22 eV and 3.11 eV, respectively.