Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftshuser, W.*; Pensl, G.*

no abstracts in English

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	308-310
Number	:
Pages	:	p.660 - 663
Publication Year/Month	:	2001/12
Meeting title	:	21st International Conference on Defects in Semiconductors (ICDS-21)
Held date	:	2001/07
Location (city)	:	Giessen
Location (country)	:	Germany
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0921-4526(01)00783-9
DOI for research data	:
Keywords	:	陽電子消滅; SiC; 原子空孔; DLTS
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:57.97 Category:Physics, Condensed Matter
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Registration No. : B20010305
JAEA Abstracts No. : 300664
Paper Submission No. : 19159

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