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Preparation of TiO$$_{2}$$-anatase film on Si(001) substrate with TiN and SrTiO$$_{3}$$ as buffer layers

Sugiharuto; Yamamoto, Shunya; Sumita, Taishi; Miyashita, Atsumi

An epitaxial TiO$$_{2}$$-anatase thin film was grown on the Si(001) substrate with SrTiO$$_{3}$$/TiN as the buffer layers by pulsed laser deposition technique under an oxygen gas supply. The characterization of the epitaxial TiO$$_{2}$$-anatase film was performed using the X-ray diffraction method. The crystallographic relationships between the TiO$$_{2}$$-anatase film and SrTiO$$_{3}$$/TiN buffer layers were analyzed by the $$theta$$-2$$theta$$ scan and pole figure measurement. The growth direction of the films was determined as $$rm TiO_{2}langle 001rangle$$ / $$rm SrTiO_{3}langle 001rangle$$ / $$rm TiNlangle 001rangle$$ / $$rm Silangle 001rangle$$ and their in-plane relationship $$rm TiO_{2}{110}$$ // $$rm SrTiO_{3}{100}$$ // $$rm TiN{100}$$ // $$rm Si{100}$$. The crystalline quality of TiO$$_{2}$$-anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using 2.0 MeV $$^{4}$$He beam.

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Category:Physics, Condensed Matter

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