Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*

Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.