Extremely high selectivity in fragmentation of (CH $_{3}$ S) $_{2}$ on Si(100) following excitation of adsorbate or substrate core level

Sekiguchi, Tetsuhiro ; Baba, Yuji ; Li, Y.; Ali, M.

no abstracts in English

Language	:	English
Journal	:	Photon Factory Activity Report 1998, Part B
Volume	:
Number	:
Pages	:	P. 67
Publication Year/Month	:	1999/11
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?199923003+00097
DOI for research data	:
Keywords	:	基板励起vs表面励起; サイト選択励起; 表面光化学反応; 光刺激脱離; 内殻電子励起; (CH $_{3}$ S) $_{2}$ ; Si(100); 電子遷移誘起脱離; シリコン; ジメチルジスルフィド
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : A19990248
JAEA Abstracts No. :
Paper Submission No. :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Extremely high selectivity in fragmentation of (CHS) on Si(100) following excitation of adsorbate or substrate core level

Extremely high selectivity in fragmentation of (CH $_{3}$ S) $_{2}$ on Si(100) following excitation of adsorbate or substrate core level