Preparation of epitaxial TiO films by pulsed laser deposition technique

Yamamoto, Shunya; Sumita, Taishi; Sugiharuto; Miyashita, Atsumi; Naramoto, Hiroshi

The epitaxial growth of high-quality TiO films has attracted much interest from the viewpoints of basic science and applications. In this study, it is shown that TiO films with anatase and rutile structure can be prepared by pulsed laser deposition (PLD) with a Nd-YAG laser under the controlled O atmosphere. The TiO films with 200 nm thickness were prepared on the SrTiO, LaAlO, LSAT and -AlO single crystal substrates. The epitaxial films were analyzed by Rutherford backscattering spectrometry (RBS) combined with channeling and X-ray diffraction for the crystallographic relationships with the substrates. The high quality anatase TiO (001) films have been successfully prepared on the LaAlO (001), LSAT (001) and SrTiO (001) substrates about 500C substrate temperature. Also the high quality rutile TiO (100) and TiO (001) films were obtained on the -AlO (0001) and (100), respectively.