Language |
: | English |
---|---|---|
Journal |
: | |
Volume |
: | 389-393 |
Number |
: | |
Pages |
: | p.1097 - 1100 |
Publication Year/Month |
: | 2002/05 |
Meeting title |
: | International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001) |
Held date |
: | 2001/10 |
Location (city) |
: | Tsukuba |
Location (country) |
: | Japan |
Paper URL |
: | |
Keywords |
: | 6H-SiC; pチャンネル; nチャンネル; エンハンスメント型MOSFET; 水素燃焼酸化; 線照射; チャンネル移動度; しきい値電圧 |
Research Facility |
: |
Accesses |
: |
- Accesses |
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Altmetrics |
: |
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