Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide

Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi

Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V $_{T}$ ) and channel mobility () for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 $^{o}$ or steam at 800 $^{o}$ in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V $_{T}$ was changed from 0.9V to 3.1 V by irradiation at 530kGy. decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V $_{T}$ was changed from 2.7 to 3.3 V by irradiation at 530kGy. decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.1093 - 1096
Publication Year/Month	:	2002/05
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	SiC; MOSFET; 線照射; しきい値電圧; チャンネル移動度
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : B20011301
JAEA Abstracts No. : 300807
Paper Submission No. : 19285

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