The Investigation of 4H-SiC/SiO $_{2}$ interfaces by optical and electrical measurements

Ishida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.1013 - 1016
Publication Year/Month	:	2002/00
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1013
DOI for research data	:
Keywords	:	MOS; Interface Layer; FTIR; Spectroscopic Ellipsometry; CV
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	産業技術総合研究所

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:20.33 Category:Materials Science, Multidisciplinary
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Registration No. : B20011298
JAEA Abstracts No. :
Paper Submission No. : 25605

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The Investigation of 4H-SiC/SiO interfaces by optical and electrical measurements

The Investigation of 4H-SiC/SiO $_{2}$ interfaces by optical and electrical measurements