Annealing behavior of vacancies and Z $_{1/2}$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	79
Number	:	24
Pages	:	p.3950 - 3952
Publication Year/Month	:	2001/12
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Paper URL	:	https://doi.org/10.1063/1.1426259
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Keywords	:	陽電子消滅; 陽電子ビーム; SiC; 電子線照射; 原子空孔; DLTS
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Registration No. : A20010437
JAEA Abstracts No. : 300302
Paper Submission No. : 18868

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Annealing behavior of vacancies and Z levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Annealing behavior of vacancies and Z $_{1/2}$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy