Fabrication of -FeSi $_{2}$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito ; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

no abstracts in English

Language	:	English
Journal	:	Analytical Sciences (CD-ROM)
Volume	:	17
Number	:	Suppl.
Pages	:	p.1073 - 1076
Publication Year/Month	:	2002/03
Meeting title	:	International Congress on Analytical Sciences 2001 (ICAS 2001)
Held date	:	2001/08
Location (city)	:	Tokyo
Location (country)	:	Japan
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Keywords	:	鉄シリサイド; 放射光; XPS; 深さ方向分析; IMFP
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Registration No. : B20012118
JAEA Abstracts No. : 300644
Paper Submission No. : 19139

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Fabrication of -FeSi thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Fabrication of -FeSi $_{2}$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)