Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry

Iida, Takeshi*; Tomioka, Yuichi*; Yoshimoto, Kimihiro*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Orihara, Misao*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ito, Hisayoshi; Ishida, Yuki*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Japanese Journal of Applied Physics, Part 1
Volume	:	41
Number	:	2A
Pages	:	p.800 - 804
Publication Year/Month	:	2002/02
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Paper URL	:	https://doi.org/10.1143/JJAP.41.800
DOI for research data	:
Keywords	:	Reflactive Indices; Oxide Layers; SiC; Sectroscopic Ellipsometry; SiO $_{2}$ ; Depth Profile; Interface Layer; Interface; MOS
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Article of JAEA R&D Review	:
Cooperating Institute	:	埼玉大学

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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:52.3 Category:Physics, Applied
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Registration No. : A20010587
JAEA Abstracts No. : 300726
Paper Submission No. : 19212

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