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Report No.
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RBS/channeling analysis of epitaxial films with Nb buffer layer on sapphire substrate

Yamamoto, Shunya; Naramoto, Hiroshi

Epitaxial Cu (111), Al (111) and Sc (0001) films were successfully grown on $$alpha$$-Al$$_{2}$$O$$_{3}$$ (11$$bar{2}$$0) substrates with a high quality Nb (110) buffer layer by electron beam evaporation technique. Films were analyzed by RBS/channeling and X-ray diffraction techniques. The Cu (111) film and Al (111) film on the Nb (110) buffer layer have twinned structure, which is rotated by 180$$^{circ}$$ with each other around the $$<$$111$$>$$ direction. The crystal quality of Cu (111) layer was improved with the increase of Nb (110) buffer layer thickness and then saturates at the high quality after about 2 nm thickness.

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Category:Instruments & Instrumentation

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