Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique

Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu*; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi

Electrodes on SiC pn diode were studied uising Transient Ion Beam Induced Current system (TIBIC). pn junction of SiC diode was formed by phosphorus ion implantation at 800 C and subsequent annealing at 1800 C for 1 min in Ar. Electrodes of diode were fabricated (1) Al evaporation and sintering at 850 C or (2) one more Al evaporation after the process mentioned above. TIBIC measurement using 15 MeV-O and 12 MeV-Ni ion micro beam. As the result, non-uniformity for transient current from the electrodes of diode (1)was observed. As for diode (2), such non-uniformity was not observed. On the other hand, the value of collected charges was the same for both diodes. This indicates that the quality of pn junction is the almost same for both diodes. For current-voltage characteristics, both diodes showed a order of pA at reverse bias of 30 V and turn-on at forward bias of 2V which are ideal for SiC diode. Thus, we can conclude that we obtain the information on electrical characteristics of electrodes which is not obtained from normal current-voltage measurement.