A Comparative study of the radiation hardness of silicon carbide using light ions

Lee, K. K.; Oshima, Takeshi; Saint, A.*; Kamiya, Tomihiro; Jamieson, D. N.*; Ito, Hisayoshi

To obtain the information on radiation damage of 6H-SiC devices, ion beam induced charge collection (IBICC) for 6H-SiC schottky diodes irradiated with proton, alpha and carbon micro beam 10 to 10 ions/cm was studied. No significant difference of degradation was observed between p- and n-substrates irradiated with 2MeV-alpha micro beam. The decrease in IBCC shows a good agreement with the calculation using non ionizing energy loss (NIEL). As a result of ion luminescence and ultra violet photo luminescence, the level of 2.32 eV was observed.