Nishijima, Toshiji*; Hearne, S. M.*; Jamieson, D. N.*; Oshima, Takeshi; Lee, K. K.; Ito, Hisayoshi
The radiation damage in silicon carbide (SiC) schottky diode was studied using ion beam induced current (IBIC). Schottky diodes with electrodes of 30 
m on n- or p-type 6H-SiC were fabricated using the evaporation of Al, Ni, and Au. To study the radiation damage of diodes, the 2MeV-He ion micro beam with a diameter of 1 m was irradiated from 10
to 10
/cm
into a 10 m 
10 m area. As the result, the value of IBIC decreased with increasing the dose of 2 MeV-He. This indicates that the charge collection decreases by the recombination centers introduced by irradiation.
Language |
: | English |
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Journal |
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Volume |
: | 210 |
Number |
: | |
Pages |
: | p.196 - 200 |
Publication Year/Month |
: | 2003/09 |
Meeting title |
: | 8th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA 2002) |
Held date |
: | 2002/09 |
Location (city) |
: | Takasaki |
Location (country) |
: | Japan |
Paper URL |
: |
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Keywords |
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Cooperating Institute |
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Accesses |
: |
- Accesses |
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InCites™ |
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Percentile:12.51 Category:Instruments & Instrumentation |
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