/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka 
The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.
Language |
: | English |
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Journal |
: | |
Volume |
: | 216 |
Number |
: | 1-4 |
Pages |
: | p.8 - 14 |
Publication Year/Month |
: | 2003/06 |
Meeting title |
: | 4th International Symposium on Control of Semiconductor Interfaces |
Held date |
: | 2002/10 |
Location (city) |
: | Karuizawa |
Location (country) |
: | Japan |
Paper URL |
: |
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Keywords |
: | Passive Oxidation; Active Oxidation; O |
Research Facility |
: |
Accesses |
: |
- Accesses |
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InCites™ |
: |
Percentile:35.62 Category:Chemistry, Physical |
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