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Coexistence of passive and active oxidation for O$$_{2}$$/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka 

The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O$$_{2}$$. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.

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Category:Chemistry, Physical

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