SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O molecular beams under 1000 K

Teraoka, Yuden; Yoshigoe, Akitaka ; Moritani, Kosuke

The oxidation reaction mechanisms for Si(001) by O molecules have been investigated in a surface temperature region from 860 K to 1300 K and in an incident energy region from 0.6 eV to 3.0 eV. Synchrotron Radiation photoemission spectroscopy was used for surface analysis. Si-2p photoemission spectra were measured during molecular beam irradiation so that their dependences on surface temperature and incident energy were clarified. SiO molecules, desorbed from the surface at high temperature region, were also detected by a quadrupole mass analyzer using O molecular beams to measure SiO desorption yield depending on surface temperature and incident energy. Consequently, a reaction scheme, oxide layers formation, etching, and coexistence of both reactions, is determined by the incident energy under 1000 K.