gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopyYoshigoe, Akitaka 
; Moritani, Kosuke; Teraoka, Yuden
It is well known that the initial Si(0 0 1) oxidation by O gas is an important reaction system because it is usually used to form gate-oxide films on MOSFET. With decreasing the size of ULSI, it is necessary to control the surface reaction with atomic scales. In this study, we report 
observation of thermal oxidation using O gas on Si(0 0 1) surface by means of synchrotron radiation photoemission spectroscopy at the soft x-ray beamline, BL23SU, in the SPring-8. We clarified the chemisorption processes of O on Si(0 0 1) surface over 773K regions at the initial oxidation stages from the results of Si2p core-level shifts. The fundamental understanding of surface reaction is expected to contribute the development of the future nanotechnology.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 216 |
Number |
: | 1-4 |
Pages |
: | p.388 - 394 |
Publication Year/Month |
: | 2003/06 |
Meeting title |
: | 4th International Symposium on Control of Semiconductor Interfaces |
Held date |
: | 2002/10 |
Location (city) |
: | Karuizawa |
Location (country) |
: | Japan |
Paper URL |
: |
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Keywords |
: | Real Time in-situ; Si(0 0 1); O |
Research Facility |
: |
Accesses |
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- Accesses |
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Percentile:45.98 Category:Chemistry, Physical |
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