Yoshigoe, Akitaka 
; Moritani, Kosuke; Teraoka, Yuden
It is well known that the thermal oxidation on Si(001) surface is an important reaction system to form of the gate-oxide films in MOSFET, since it is necessary to control the film thickness under a few nano-meter scale. Thus, we have studied the oxygen uptake and the Si oxidation states depending on the oxidation times by using the synchrotron radiation photoemission spectroscopy in 1
10
Pa of O
at the surface temperature from 870K to 1120K. We clarified the oxidation depending on the surface temperature was explained by the kinetics (Langumuir and auto-catalytic model). Using real time photoemission spectroscopy, we found that the Si
sepcies was not formed at the initial oxidation stage.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 42 |
Number |
: | 6B |
Pages |
: | p.3976 - 3982 |
Publication Year/Month |
: | 2003/06 |
Meeting title |
: | 2002 International Microprocesses and Nanotechnology Conference (MNC2002) |
Held date |
: | 2002/11 |
Location (city) |
: | Tokyo |
Location (country) |
: | Japan |
Paper URL |
: |
|
Keywords |
: | Si(001); Initial Thermal Oxidation; Kinetics; Synchrotron Radiation; Photoemission Sepctroscopy; O1s; Si2p; Real Time |
Research Facility |
: |
Accesses |
: |
- Accesses |
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InCites™ |
: |
Percentile:28.18 Category:Physics, Applied |
Altmetrics |
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