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Real-time monitoring of initial thermal oxidation on Si(001) surfaces by synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka ; Moritani, Kosuke; Teraoka, Yuden

It is well known that the thermal oxidation on Si(001) surface is an important reaction system to form of the gate-oxide films in MOSFET, since it is necessary to control the film thickness under a few nano-meter scale. Thus, we have studied the oxygen uptake and the Si oxidation states depending on the oxidation times by using the synchrotron radiation photoemission spectroscopy in 1$$times$$10$$^{-4}$$Pa of O$$_{2}$$ at the surface temperature from 870K to 1120K. We clarified the oxidation depending on the surface temperature was explained by the kinetics (Langumuir and auto-catalytic model). Using real time photoemission spectroscopy, we found that the Si$$^{4+}$$ sepcies was not formed at the initial oxidation stage.

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Category:Physics, Applied

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