Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Nakao, Setsuo*; Saito, Kazuo*; Kim, Y. T.*

Photo luminescence properties of GaN implanted with Eu ions were studied. The GaN was epitaxialy grown on sapphire substrate. Multiple-implantation at RT was done to form box profile of Eu at a mean Eu concentration from 2.810 $^{19}$ to 2.810 $^{20}$ /cm $^{3}$ . Samples were annealed in NH $_{3}$ , N $_{2}$ at 900-1050 $^{circ}$ C for 5-30 min after implantation. As the result, sharp emission peaks around 621nm which is assigned as 4f-4f transition were observed. The intensity of peaks increases with increasing Eu concentration and saturate at Eu concentrations around 2.810 $^{20}$ /cm $^{3}$ .

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	206
Number	:
Pages	:	p.1033 - 1036
Publication Year/Month	:	2003/05
Meeting title	:	13th International Conference on Ion Beam Modification of Materials (IBMM 2002)
Held date	:	2002/09
Location (city)	:	Kobe
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0168-583X(03)00928-5
DOI for research data	:
Keywords	:	窒化ガリウム(GaN); Eu注入; フォトルミネッセンス測定
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	豊橋技術科学大学

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Registration No. : B20020616
JAEA Abstracts No. : 310754
Paper Submission No. : 20267

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