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Observation of transient current induced in silicon carbide diodes by ion irradiation

Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi

Ion beam induced current for pn SiC diode was observed by using MeV range ion beams.The diodes used in this study were pn diode fabricated on n-type epitaxial 6H-SiC. The p region was formed using Al-ion implantation at 800 $$^{o}$$C and subsequent annealing at 1800 $$^{o}$$C. The value of charge collection for diode applied to 30V by 12MeV-Ni microbeam irradiationis estimated to be (1.7-1.8)$$times$$10$$^{-13}$$Q from the analyzing transient-IBIC measurement.The efficiency of the charge collection is 85-93%.

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Category:Instruments & Instrumentation

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