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Real-time observation of initial stage on Si(001) oxidation studied by O-1s photoemission spectroscopy using synchrotron radiation

Yoshigoe, Akitaka ; Moritani, Kosuke; Teraoka, Yuden

Many studies of the thermal oxidation on Si(001) surface by O$$_{2}$$ gas have been already carried out from both experimental and theoretical methods. The oxidation reaction kinetics have been studied by real time photoemission spectroscopy. Most reports, however, were performed at a fixed electron binding energy. We present the study of initial stage of thermal oxidation on Si(001) surface at the O$$_{2}$$ pressure of 1x10$$^{-4}$$ Pa performed by real time O-1s synchrotron radiation photoemission spectroscopy.All experiments were performed at SUREAC2000 at BL23SU in the SPring-8. The pure O$$_{2}$$ gas of 1x10$$^{-4}$$ Pa was fed into the reaction analysis chember through a variable leak valve. The results of oxygen uptake curves obtained by O-1s peak area intensities at the substrate temperature of 855K and 955K indicate that the Langmuir adsorption model provided the best fitting result for the 855K oxidation, whereas the oxidation at 955K was well explained by the autocatalytic reaction model.

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Category:Physics, Applied

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