Optical ionization of DX center in AlGaAs:Se by inner-shell excitation

Yoshino, Yoko; Takarabe, Kenichi*; Ishii, Masashi*; Katayama, Yoshinori; Shimomura, Osamu

DX state is strongly localized. This nature could be investigated by observing relaxation process of localized electrons to emptied inner shells. We have found two different optical ionization process of the DX center in Al $_{x}$ Ga $_{1-x}$ As:Se (x=0.33, $N_{rm Se}=5times10^{17}$ (cm $^{-3}$ )) by using synchrotron radiation. They are tentatively assigned to be a direct lift of an inner-shell electron to the conduction band (CB) followed by a capture of an electron at the DX center to the emptied inner shell $({rm DX}^{-}+hnu ({rm L,}$ K-edge $)rightarrow {rm DX}^{0}+e_{rm CB})$ and the Auger ionization of one electron of the DX center to the CB followed by a capture of another electron to the emptied inner shell $({rm DX}^{-}+hnu ({rm L,}$ K-edge $)rightarrow {rm DX}^{+}+e_{rm CB}+e_{rm vacuum})$ .

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	273-274
Number	:
Pages	:	p.781 - 783
Publication Year/Month	:	1999/12
Meeting title	:	20th international conference on defects in semiconductors
Held date	:	1999/07
Location (city)	:	Berkeley
Location (country)	:	U. S. A.
Patent information	:
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Paper URL	:	https://doi.org/10.1016/S0921-4526(99)00648-1
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	DX Center; Inner-Shell; Excitation; Synchrtron Radiation; ICTS; AlGaAs; Se; Ionization; Defect; Semiconductor
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : B20020726
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