Low-temperature epitaxial growth of -SiC by multiple-energy ion implantation

Z.J.Zhang*; Naramoto, Hiroshi; Miyashita, Atsumi; B.Stritzker*; J.K.N.Lindner*

no abstracts in English

Language	:	English
Journal	:	Physical Review B
Volume	:	58
Number	:	19
Pages	:	p.12652 - 12654
Publication Year/Month	:	1998/11
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Paper URL	:	https://doi.org/10.1103/PhysRevB.58.12652
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Keywords	:	Ion Implantation; Si; Epitaxial Growth; -SiC
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:61.75 Category:Materials Science, Multidisciplinary
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Registration No. : A19980283
JAEA Abstracts No. : 270152
Paper Submission No. : 16121

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