Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

no abstracts in English

Language	:	English
Journal	:	Mater. Sci. Forum
Volume	:	264-268
Number	:
Pages	:	p.721 - 724
Publication Year/Month	:	1998/00
Meeting title	:	Int. Conf. on Silicon Carbide, III-nitrides and Related Materials-1997
Held date	:	1997/09
Location (city)	:	Sweden
Location (country)	:
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	6H-SiC; リン注入; 高温注入; n型伝導; ホール係数
Research Facility	:
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Article of JAEA R&D Review	:
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Accesses	:	- Accesses
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Registration No. : B19970584
JAEA Abstracts No. : 260712
Paper Submission No. : 15697

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