Improvement of SiO $_{2}$ /4H-SiC interface by using high temperature hydrogen annealing at 1000 $^{circ}$ C

Fukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito

no abstracts in English

Language	:	English
Journal	:	Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998)
Volume	:
Number	:
Pages	:	p.100 - 101
Publication Year/Month	:	1998/00
Meeting title	:	1998 International Conference on Solid State Devices and Materials (SSDM 1998)
Held date	:	1998/09
Location (city)	:	Hiroshima
Location (country)	:	Japan
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DOI for research data	:
Keywords	:	4H-SiC; MOS; CV; 水素アニーリング
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Article of JAEA R&D Review	:
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Registration No. : B19980897
JAEA Abstracts No. : 48000169
Paper Submission No. : 22520

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Improvement of SiO/4H-SiC interface by using high temperature hydrogen annealing at 1000C

Improvement of SiO $_{2}$ /4H-SiC interface by using high temperature hydrogen annealing at 1000 $^{circ}$ C