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Report No.

Improvement of SiO$$_{2}$$/4H-SiC interface by using high temperature hydrogen annealing at 1000$$^{circ}$$C

Fukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito

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