Low-temperature epitaxial growth of SrO on hydrogen-passivated Si(100) surface

Asaoka, Hidehito ; Saiki, Koichiro*; Koma, Atsushi*; Yamamoto, Hiroyuki

no abstracts in English

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	284-288
Number	:
Pages	:	p.2101 - 2102
Publication Year/Month	:	2000/07
Meeting title	:	22nd International Conference on Low Temperature Physics (LT-22)
Held date	:	1999/08
Location (city)	:	Helsinki
Location (country)	:	Finland
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0921-4526(99)02986-5
DOI for research data	:
Keywords	:	単結晶; 結晶成長; エピタキシャル成長; Si; SrO; 水素終端
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
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Registration No. : B19990172
JAEA Abstracts No. : 280530
Paper Submission No. : 17500

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