Effect of radiation damage on luminescence of erbium-implanted SiO $_{2}$ /Si studied by slow positron beam

Kawasuso, Atsuo; Arai, H.*; Hirata, K.*; Sekiguchi, T.*; Kobayashi, Yoshinori*; Okada, Sohei

no abstracts in English

Language	:	English
Journal	:	Radiation Physics and Chemistry
Volume	:	58
Number	:	5-6
Pages	:	p.615 - 619
Publication Year/Month	:	2000/06
Meeting title	:	6th International Workshop on Positron and Positronium Chemistry
Held date	:	1999/06
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0969-806X(00)00228-0
DOI for research data	:
Keywords	:	エルビウム; SiO $_{2}$ -Si; 陽電子消滅; 低速陽電子; 損傷; 発光
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
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InCites™	:	Percentile:26.42 Category:Chemistry, Physical
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Registration No. : B19990215
JAEA Abstracts No. : 280717
Paper Submission No. : 17666

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Effect of radiation damage on luminescence of erbium-implanted SiO/Si studied by slow positron beam

Effect of radiation damage on luminescence of erbium-implanted SiO $_{2}$ /Si studied by slow positron beam