Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Agui, Akane; Sathe, C.*; Guo, J.-H.*; Nordgren, J.*; Mankefors, S.*; Nilsson, P. O.*; Kanski, J.*; Andersson, T. G.*; Karlsson, K.*

no abstracts in English

Language	:	English
Journal	:	Applied Surface Science
Volume	:	166
Number	:	1-4
Pages	:	p.309 - 312
Publication Year/Month	:	2000/10
Meeting title	:	7th International Conference on the Formation of Semiconductor Interface
Held date	:	1999/06
Location (city)	:	Sweden
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0169-4332(00)00468-2
DOI for research data	:
Keywords	:	ヘテロ構造; 半導体; 界面; 軟X線発光; 放射光; AlAs; 薄膜
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:15.67 Category:Chemistry, Physical
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Registration No. : B19990229
JAEA Abstracts No. : 290040
Paper Submission No. : 17770

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