Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	338-342
Number	:
Pages	:	p.1299 - 1302
Publication Year/Month	:	2000/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM '99)
Held date	:	1999/10
Location (city)	:	USA
Location (country)	:	USA
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	6H-SiC; MOSトランジスタ; チャンネル移動度; 水蒸気処理
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Article of JAEA R&D Review	:
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Registration No. : B19990576
JAEA Abstracts No. : 280682
Paper Submission No. : 17640

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