Modelling of radiation response of p-Channel SiC MOSFETs

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

The possibility of applying p-channel SiC MOSFET to dosimeter was investigated. The Source and Drain of SiC MOSFET was formed Al ion implantation at 800 $^{o}$ C and annealing at 1800 $^{o}$ C for 1 min in Ar. The gate oxide was fabricated using pyrogenic oxidation. Al electrodes of source and drain is formed Al evaporation and sintering at 850 $^{o}$ C for 5 min in Ar. Gamma-ray irradiation to the MOSFETs was doned at the rate of 1MR/h at room temperature. As the result, the change of threshold voltage by irradiation is explained to be KD $^{n}$ , where K and n are constants.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	433-436
Number	:
Pages	:	p.761 - 764
Publication Year/Month	:	2003/08
Meeting title	:	European Conference on Silicon Carbide and Related Materials (ECSCRM2002)
Held date	:	2002/09
Location (city)	:	Linkping
Location (country)	:	Sweden
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	pチャンネルSiC MOSFET; 線照射; 線量計
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : B20020700
JAEA Abstracts No. : 310743
Paper Submission No. : 20256

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